Seoul, April 19, 2024 – Memory company SK hynix Inc. announced today a memorandum of understanding with TSMC to produce next-generation HBM and enhance logic and HBM integration through advanced packaging technology. The company plans to proceed with the development of HBM4, or the sixth generation of the HBM family, slated to be mass produced […]
HPC News Bytes 20240408: Chips Ahoy! …and Quantum Error Rate Progress
April 8, 2024 by
A good April morning to you! Chips dominate the HPC-AI news landscape, which has become something of an industry commonplace of late, including: TSMC’s Arizona fab on schedule, the Dutch government makes a pitch to ASML, Intel foundry business’s losses, TSMC expands CoWoS capacity, SK hynix to investing in Indiana and Purdue, Quantinuum and Microsoft report 14,000 error-free instances
SK hynix to Invest $3.9B in Indiana HBM Fab and R&D with Purdue
April 3, 2024 by
Memory chip company SK hynix announced it will invest $3.87 billion in West Lafayette, Indiana to build an advanced packaging fabrication and R&D facility for AI products. The project, which the company said is the first of its kind in the U.S., will be an advanced….
HPC News Bytes 20240325: Final GTC Thoughts, Intel and CHIPS Act Largesse, Ultra Ethernet Consortium Expands, Samsung’s GPU/HBM Chip
March 25, 2024 by
A happy end-of-March morning to you! Here’s a rapid (5:57) run-though of the latest news in HPC-AI, including: final reflections on Nvidia GTC 2024, Intel to receive $8.5 billion via US CHIPS Act, the expanding Ultra Ethernet Consortium, Samsung’s upcoming GPU/HBM blend.
SK hynix Says It Has Developed First 12-Layer HBM3
April 20, 2023 by
Seoul, April 20, 2023 – SK hynix Inc. announced today it has become the industry’s first to develop 12-layer HBM3 product with a 24 gigabyte (GB) memory capacity, currently the largest in the industry, and said customers’ performance evaluation of samples is underway. HBM (High Bandwidth Memory) is a high-performance memory that vertically interconnects multiple […]
SK hynix Announces 9.6 Gbps DRAM LPDDR5T
January 25, 2023 by
Seoul, January 25, 2023 – SK hynix Inc. today said it has developed the world’s fastest mobile DRAM ‘LPDDR5T (Low Power Double Data Rate 5 Turbo)’ and provided sample products to customers. The new product operates at a data rate of 9.6 gigabits per second (Gbps), 13 percent faster than the previous generation LPDDR5X* unveiled […]
SK hynix to Supply HBM3 DRAM to NVIDIA
June 8, 2022 by
Seoul, June 9, 2022 – SK hynix announced that it began mass production of HBM3, high-performance memory that vertically interconnects multiple DRAM chips “and dramatically increases data processing speed in comparison to traditional DRAM products,” the company said. HBM3 DRAM is the 4th generation HBM product, succeeding HBM (1st generation), HBM2 (2nd generation) and HBM2E […]
SK hynix MOU with Dalian, China, on Acquisition of Intel Fab for Supporting Chinese IT Industry
January 29, 2021 by
Dalian, China – Seoul, Korea – Jan. 29, 2021 – SK hynix Inc. (or ‘the Company’, www.skhynix.com) today signed a memorandum of understanding (“MOU”) with the Dalian Municipal People’s Government of China and the Administrative Committee of Jinpu New District, Dalian via video link, under which both parties will jointly collaborate on SK hynix’s acquisition of Intel’s Dalian semiconductor fabrication plant (“Dalian […]
