SEOUL – Dec. 23, 2021 – Samsung Electronics Co., Ltd. today announced the PM1743 SSD for enterprise servers, integrating the PCIe (Peripheral Component Interconnect Express) 5.0 interface with Samsung’s advanced sixth-generation V-NAND. “For over a decade, Samsung has been delivering SATA, SAS and PCIe-based SSDs that have been recognized for outstanding performance and reliability by leading […]
IBM and Samsung Unveil ‘Semiconductor Breakthrough That Defies Conventional Design’
Today, IBM and Samsung Electronics jointly announced what they said is a breakthrough in semiconductor design utilizing a new transistor architecture that allows more transistors to be packed in an IC chip. The key: the transistors stand up rather than lie down, thus taking up less space and offering “a pathway to the continuation of […]
Inspur and Samsung Announce Joint Open Storage Solution for OCP
SAN JOSE, November 9, 2021 – At this week’s OCP Global Summit in San Jose Inspur and Samsung will jointly launch the Poseidon V2 E3.x reference system. This product adopted composable architecture to maximize the benefits of EDSFF E3.x form factor. The Poseidon V2 system can accommodate not only the PCIe Gen5 SSDs but also various […]
Samsung Claims First Open-source Software for CXL Memory Platform
Samsung today introduced what it said is the first open-source software solution designed for the Compute Express Link (CXL) memory platform. The company said the Scalable Memory Development Kit (SMDK) builds on Samsung’s May launch of a CXL memory expander, designed to allow memory capacity and bandwidth to scale to levels exceeding server system limits. […]
Samsung: First HKMG-Based 512GB DDR5 Memory Targets Bandwidth-Intensive Applications
Samsung today announced it has expanded its DDR5 DRAM memory portfolio with what the company said is the first 512GB DDR5 module based on High-K Metal Gate (HKMG) process technology, designed to support next-gen computing systems, supercomputers and large-scale data centers “Delivering more than twice the performance of DDR4 at up to 7,200 megabits per second […]
Roll Over von Neumann? Samsung Claims Progress on the Compute-Memory Divide for HPC, AI
Samsung is claiming progress on the ages-old compute-memory bottleneck inherent in the classical von Neumann computing architecture. The company has announced what it said is the industry’s first High Bandwidth Memory (HBM) integrated with artificial intelligence (AI) processing power — the HBM-PIM. The company said the processing-in-memory (PIM) architecture brings AI computing capabilities inside high-performance […]
IBM Launches 7nm POWER10 CPU
IBM today announced a new IBM POWER10 CPU family, its first 7nm form factor platform, built with Samsung, designed for enterprise hybrid cloud computing with up to 3x greater processor energy efficiency, workload capacity, and container density than its predecessor, according to the company. According to IBM, POWER10 highlights include: Support for multi-petabyte memory clusters […]
Samsung, IBM, Tencent Lead AI Patent Race, Europe Lags
Three companies – Samsung, IBM and Tencent – dominate the global AI patent race over the past 10 years, while fierce competition between the U.S, and China overshadows other countries and regions, including the EU. These are the key findings of OxFirst, a specialist in IP law and economics (and spin out of Oxford University), […]
Samsung Launches Flashbolt High Bandwidth 2E Memory
Today Samsung Electronics launched ‘Flashbolt,’ its third-generation High Bandwidth Memory 2E (HBM2E). The new 16-gigabyte (GB) HBM2E is uniquely suited to maximize HPC systems and help system manufacturers to advance their supercomputers, AI-driven data analytics and state-of-the-art graphics systems in a timely manner. “With the introduction of the highest performing DRAM available today, we are taking a critical step to enhance our role as the leading innovator in the fast-growing premium memory market,” said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics.